vs-20ut04, vs-20wt04fn www.vishay.com vishay semiconductors revision: 03-nov-11 1 document number: 94573 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high performance schottky generation 5.0, 20 a note ?v f measured at 125 c, connecting 2 anode pins features ? 175 c high perfo rmance schottky diode ? very low forward voltage drop ? extremely low reverse leakage ? optimized v f vs. i r trade off for high efficiency ? increased ruggedness for reverse avalanche capability ? rbsoa available ? negligible switching losses ? submicron trench technology ? compliant to rohs directive 2002/95/ec applications ? specific for pv cells bypass diode ? high efficiency smps ? high frequency switching ? output rectification ? reverse battery protection ? freewheeling ? dc/dc systems ? increased power density systems product summary package d-pak (to-252aa), i-pak (to-251aa) i f(av) 20 a v r 45 v v f at i f 0.53 v i rm max. 7 ma at 125 c t j max. 175 c diode variation single die e as 108 mj i-pak (to-251aa) d-pak (to-252aa) vs-20ut04 vs-20wt04fn base cathode anode anode 4, 2 3 1 base cathode anode anode 4, 2 3 1 major ratings and characteristics symbol characteristics values units v rrm 45 v v f 20 apk, t j = 125 c (typical, measured connecting 2 anode pins) 0.480 v t j range - 55 to 175 c voltage ratings parameter symbol test conditions vs-20ut04 vs-20wt04fn units maximum dc reverse voltage v r t j = 25 c 45 v
vs-20ut04, vs-20wt04fn www.vishay.com vishay semiconductors revision: 03-nov-11 2 document number: 94573 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) measured connecting 2 anode pins notes (1) pulse width < 300 s, duty cycle < 2 % (2) only 1 anode pin connected absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) 50 % duty cycle at t c = 153 c, rectangu lar waveform 20 a maximum peak one cycle non-repetitive surge current i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied (1) 900 a 10 ms sine or 6 ms rect. pulse 220 non-repetitive avalanche energy e as t j = 25 c, i as = 7 a, l = 4.4 mh 108 mj repetitive avalanche current i ar limited by frequency of operation and time pulse duration so that t j < t j max. i as at t j max. as a functi on of time pulse i as at t j max. a electrical specifications parameter symbol test conditions typ. max. units forward voltage drop v fm (1)(2) 10 a t j = 25 c 0.505 0.540 v 20 a 0.570 0.610 10 a t j = 125 c 0.415 0450 20 a 0.520 0.580 reverse leakage current i rm (1) t j = 25 c v r = rated v r - 100 a t j = 125 c - 7 ma junction capacitance c t v r = 5 v dc (test signal range 100 khz to 1 mhz), 25 c 1900 - pf series inductance l s measured lead to lead 5 mm from package body - - nh maximum voltage rate of change dv/dt rated v r - 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 55 to 175 c maximum thermal resistance, junction to case r thjc dc operation 1.2 c/w typical thermal resistance, case to heatsink r thcs 0.3 approximate weight 2g 0.07 oz. marking device case style i-pak 20ut04 case style d-pak 20wt04fn
vs-20ut04, vs-20wt04fn www.vishay.com vishay semiconductors revision: 03-nov-11 3 document number: 94573 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics i f - instantaneous forward current (a) v fm - forward volta g e drop (v) 0 0.2 0.4 0.8 1.2 0.6 1.0 1.4 1.6 1 10 100 94573_01 t j = 25 c t j = 125 c t j = 175 c i r - reverse current (ma) v r - reverse volta g e (v) 0 5 10 15 30 25 40 35 20 45 0.0001 0.001 0.01 0.1 1 10 100 94573_02 t j = 125 c t j = 175 c t j = 150 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c c t - junction capacitance (pf) v r - reverse volta g e (v) 01020 40 30 515 35 25 45 100 10 000 1000 94573_03 0.01 0.1 1 10 0.00001 94573_04 0.0001 0.001 0.01 0.1 t 1 - rectan g ular pulse duration (s) z thjc - thermal impedance (c/w) 1 s ingle pul s e (thermal re s i s tance) d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20
vs-20ut04, vs-20wt04fn www.vishay.com vishay semiconductors revision: 03-nov-11 4 document number: 94573 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - maximum non-re petitive surge current note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r allowable case temperature (c) i f(av) - avera g e forward current (a) 20 15 10 525 30 0 160 180 120 140 150 170 130 94573_05 sq uare wave (d = 0.50) 80 % rated v r applied s ee note (1) dc avera g e power loss (w) i f(av) - avera g e forward current (a) 20 25 15 10 5 30 0 15 20 0 10 5 94573_06 180 120 90 60 30 dc rm s limit 100 10 100 t p - square wave pulse duration (s) i fsm - non-repetitive surge current (a) 94573_07 1000 10 000 1000
vs-20ut04, vs-20wt04fn www.vishay.com vishay semiconductors revision: 03-nov-11 5 document number: 94573 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 8 - reverse bias safe operating area (a valanche current vs. rectangular pulse duration) fig. 9 - reverse bias safe operating area (avalanche energy vs. rectangular pulse duration) 0.1 1 10 100 1000 110 rectan g ular pulse duration (s) avalanche current (a) 100 94573_08 t j = 25 c t j = 125 c t j = 175 c 10 100 1000 110 rectan g ular pulse duration (s) avalanche ener g y (mj) 100 t j = 25 c t j = 125 c t j = 175 c 94573_09
vs-20ut04, vs-20wt04fn www.vishay.com vishay semiconductors revision: 03-nov-11 6 document number: 94573 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table links to related documents dimensions i-pak (to-251aa) www.vishay.com/doc?95024 d-pak (to-252aa) www.vishay.com/doc?95448 part marking information i-pak (to-251aa) www.vishay.com/doc?95025 d-pak (to-252aa) www.vishay.com/doc?95059 packaging information www.vishay.com/doc?95033 spice model www.vishay.com/doc?95027 1 - vishay semiconductors product 2 - current rating (20 a) 3 - package: u = i-pak w = d-pak 4 - t = trench 5 - voltage code (45 v) 7 - d-pak, i-pak: none = tube (75 pieces) d-pak only: tr = tape and reel trl = tape and reel (left oriented) trr = tape and reel (right oriented) 6 - to-252aa (d-pak) device code 5 1 3 2 4 6 7 vs- 20 u t 04 fn trl
document number: 95024 for technical questions within your region, please contact one of the following: www.vishay.com revision: 24-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 i-pak - s outline dimensions vishay semiconductors dimensions for i-pak - s in millimeters symbol dimensional requirements min. nom. max. e 6.40 6.60 6.70 l 3.98 4.13 4.28 l4 0.66 0.76 0.86 l5 1.96 2.16 2.36 d 6.00 6.10 6.20 h 11.05 11.25 11.45 b 0.64 0.76 0.88 b2 0.77 0.84 1.14 b3 5.21 5.34 5.46 b4 0.41 0.51 0.61 e 2.286 bsc a 2.20 2.30 2.38 c 0.40 0.50 0.60 c2 0.40 0.50 0.60 d1 5.30 - - e1 4.40 - - e d l5 l4 ee a c2 l c h d1 1 2 3 4 b b4 b2 b3 e1
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